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| inchange semiconductor product specification silicon npn power transistors 2SD1411 description ? with to-220fa package ? low saturation voltage ? complementary to 2sb1018 applications ? power amplifier applications ? high current switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 100 v v ceo collector -emitter voltage open base 80 v v ebo emitter-base voltage open collector 5 v i c collector current 7 a i b base current 1 a t c =25 ?? 30 p c collector power dissipation t a =25 ?? 2.0 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SD1411 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma; i b =0 80 v v cesat collector-emitter saturation voltage i c =4a ;i b =0.4a 0.25 0.5 v v besat base-emitter saturation voltage i c =4a ;i b =0.4a 0.9 1.4 v i cbo collector cut-off current v cb =100v; i e =0 5 | a i ebo emitter cut-off current v eb =5v; i c =0 5 | a h fe-1 dc current gain i c =1a ; v ce =1v 70 240 h fe-2 dc current gain i c =4a ; v ce =1v 30 f t transition frequency v ce =4v;i c =1a 10 mhz c ob collector output capacitance f=1mhz ; v cb =10v;i e =0 250 pf switching times t on turn-on time 0.4 | s t stg storage time 2.5 | s t f fall time i b1 =-i b2 =0.3a v cc =30v ,r l =10 |? 0.5 | s ? h fe-1 classifications o y 70-140 120-240 inchange semiconductor product specification 3 silicon npn power transistors 2SD1411 package outline fig.2 outline dimensions(unindicated tolerance: ? 0.15 mm) inchange semiconductor product specification 4 silicon npn power transistors 2SD1411 |
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